| PART |
Description |
Maker |
| IC43R16160 IC43R16160-5T IC43R16160-6T IC43R16160- |
DYNAMIC RAM, DDR
4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| M14D5121632A M14D5121632A-2.5BG M14D5121632A-3BG |
8M x 16 Bit x 4 Banks DDR II SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| W9425G6JH |
4M X 4 BANKS X 16 BITS DDR SDRAM
|
Winbond
|
| W9464G6IH |
1M × 4 BANKS × 16 BITS DDR SDRAM
|
Winbond
|
| W9425G6EH |
4 M 隆驴 4 BANKS 隆驴 16 BITS DDR SDRAM
|
Winbond
|
| W9425G6EH |
4 M × 4 BANKS × 16 BITS DDR SDRAM
|
Winbond
|
| W9825G6DH-6C |
4M 4 BANKS 16 BITS SDRAM 16M X 16 DDR DRAM, 5.4 ns, PDSO54
|
Winbond Electronics, Corp.
|
| W981616AH W981616AHB1 |
512 x 2 Banks x 16 Bits SDRAM
512K x 2 BANKS x 16 BIT SDRAM
From old datasheet system
|
Winbond Electronics
|
| M65KG256AB8W8 |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| IDT72T40108L6-7BB IDT72T40118L6-7BB IDT72T40118L6- |
64K x 40 TeraSync DDR FIFO, 2.5V
128K x 40 TeraSync DDR FIFO, 2.5V
2.5 VOLT HIGH-SPEED TeraSync?? DDR/SDR FIFO 40-BIT CONFIGURATION
16K x 40 TeraSync DDR FIFO, 2.5V
32K x 40 TeraSync DDR FIFO, 2.5V
|
IDT
|
| EDE1104AASE-5C-E EDE1108AASE-5C-E EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. 256M X 4 DDR DRAM, 0.6 ns, PBGA68
|
Elpida Memory, Inc.
|
